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| SMD Type Silicon NPN Epitaxial 2SD2115S TO-252 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low frequency power amplifier. +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 150 60 5 2 2.5 18 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Symbol Testconditons Min 150 60 5 10 150 0.8 1.3 0.6 V V is Typ Max Unit V V V iA V(BR)CBO IC = 1 mA, IE = 0 V(BR)CEO IC = 10 mA, RBE = V(BR)EBO IE = 1 mA, IC = 0 ICBO hFE VCB = 100 V, IE = 0 VCE = 5 V,IC = 1.5 A VCE(sat) IC = 1.5 A,IB = 0.05 A VBE(sat) IC = 1.5 A,IB = 0.05 A tf IC = 1.5 A,IB = -IB2 =50 mA 3.80 www.kexin.com.cn 1 |
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